Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor-Reference-Cited by-同舟云学术

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Investigation of Sc2O3 Based All-Solid-State EIS Structure for AlGaN/GaN HEMT pH Sensor

Published:2019-10 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE SENSORS
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Author:

Sama Nossikpendou Yves,Bouhnane Hafsa,Gautier Simon,Ahaitouf Ali,Matray Jean Michel,Paul Salvestrini Jean,Ougazzaden Abdallah,Hathcock Andrew,He Dongyuan,Phuong Vuong Thi Quynh,Karrakchou Soufiane,Ayari Taha,Mballo Adama,Bishop Chris,Halfaya Yacine

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8949872/8956486/08956762.pdf?arnumber=8956762

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sensitivity Analysis of HEMT Biosensor for Variation in Al_x Ga_1-xN Layer Alloy Composition, Bulk Trap and Doping;2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC);2024-01-25

2. High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer;2021 IEEE Sensors;2021-10-31

3. Prospective Sensing Applications of Novel Heteromaterial Based Dopingless Nanowire-TFET at Low Operating Voltage;IEEE Transactions on Nanotechnology;2020

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