GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics-Reference-Cited by-同舟云学术

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GaN Nanowire n-MOSFET With 5 nm Channel Length for Applications in Digital Electronics

Published:2017-07 Issue:7 Volume:38 Page:859-862
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chowdhury Nadim^ORCID,Iannaccone Giuseppe,Fiori Gianluca,Antoniadis Dimitri A.,Palacios Tomas

Funder

MIT-PISA MISTI Program

ONR-PECASE Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7956370/07927390.pdf?arnumber=7927390

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3. Enhanced self-powered CsCu2I3/GaN heterojunction UV photodetectors based on highly oriented CsCu2I3 thin films;Journal of Alloys and Compounds;2023-12

4. Study of Nanosheet Performance by Varying the Aspect Ratio;2023 World Conference on Communication & Computing (WCONF);2023-07-14

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