A 'self-aligned' selective MBE technology for high-performance bipolar transistors-Reference-Cited by-同舟云学术

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A 'self-aligned' selective MBE technology for high-performance bipolar transistors

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Container-title:International Technical Digest on Electron Devices
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Author:

Sato F.,Takemura H.,Tashiro T.,Hirayama H.,Hiroi M.,Koyama K.,Nakamae M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/878/6081/00237125.pdf?arnumber=237125

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Diffusion of adatom in the selective epitaxial growth of Si(100): A molecular dynamics study;Applied Physics Letters;2006-06-05

3. Fabrication technology of SiGe hetero-structures and their properties;Surface Science Reports;2005-11

4. Industry Examples at the State-of-the-Art;Silicon Heterostructure Handbook;2005-11

5. SiGe HBT for application in BiCMOS technology: II. Design, technology and performance;Semiconductor Science and Technology;2001-05-16

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