Oxygen vacancy with large lattice distortion as an origin of leakage currents in SiO/sub 2/-Reference-Cited by-同舟云学术

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Oxygen vacancy with large lattice distortion as an origin of leakage currents in SiO/sub 2/

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Container-title:International Electron Devices Meeting. IEDM Technical Digest
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Author:

Yokozawa A.,Oshiyama A.,Miyamoto Y.,Kumashiro S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/5237/14153/00650480.pdf?arnumber=650480

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