First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy-Reference-Cited by-同舟云学术

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First fabrication of AlGaAs/GaAs laser diodes with GaAs islands active regions on Si grown by droplet epitaxy

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Container-title:International Electron Devices Meeting. Technical Digest
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Author:

Egawa T.,Ogawa A.,Jimbo T.,Umeno M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx3/4251/12029/00553615.pdf?arnumber=553615

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Semiconductor nanostructures: a new impact on electronics;Applied Surface Science;1998-06

2. AlGaAs/GaAs Laser Diodes with GaAs Islands Active Regions on Si Grown by Droplet Epitaxy;Japanese Journal of Applied Physics;1998-03-30

3. Physics and Technology of Semiconductor Nanostructures;Heterostructure Epitaxy and Devices — HEAD’97;1998

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