High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration-Reference-Cited by-同舟云学术

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Published:2021-12 Issue:12 Volume:68 Page:6605-6609
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Si Mengwei^ORCID,Lin Zehao^ORCID,Chen Zhizhong,Ye Peide D.^ORCID

Funder

Semiconductor Research Corporation SRC through the nanoelectronic COmputing REsearch nCORE Innovative Materials and Processes for Accelerated Compute Technologies IMPACT Center

SRC Defense Advanced Research Projects Agency DARPA Joint University Microelectronics Program JUMP Applications and Systems Driven Center for Energy-Efficient Integrated NanoTechnologies ASCENT Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9632442/09521973.pdf?arnumber=9521973

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterogeneous monolithic 3D integration for hybrid vertical CMOS inverter using n-type IGTO TFT on p-type Si FET;Materials Science in Semiconductor Processing;2025-01

2. Electrical Characteristics of BEOL-Compatible Top-Gate In₂O₃ Transistors;2024 IEEE Silicon Nanoelectronics Workshop (SNW);2024-06-15

3. Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer;IEEE Electron Device Letters;2024-05

4. Sub-5 nm Ultrathin In₂O₃ Transistors for High-Performance and Low-Power Electronic Applications;ACS Applied Materials & Interfaces;2024-04-27

5. Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors;physica status solidi (b);2024-04-15