Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond-Reference-Cited by-同舟云学术

Challenges and solutions of FinFET integration in an SRAM cell and a logic circuit for 22 nm node and beyond

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Kawasaki H.,Basker V. S.,Yamashita T.,Lin C.-H.,Zhu Y.,Faltermeier J.,Schmitz S.,Cummings J.,Kanakasabapathy S.,Adhikari H.,Jagannathan H.,Kumar A.,Maitra K.,Wang J.,Yeh C.-C.,Wang C.,Khater M.,Guillorn M.,Fuller N.,Chang J.,Chang L.,Muralidhar R.,Yagishita A.,Miller R.,Ouyang Q.,Zhang Y.,Paruchuri V. K.,Bu H.,Doris B.,Takayanagi M.,Haensch W.,McHerron D.,O'Neill J.,Ishimaru K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424366.pdf?arnumber=5424366

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A High-Speed Sense Amplifier Based Flip Flop with a Single Ended Latch Design and Low Voltage Operating Capabilities;2023 3rd International Conference on Smart Generation Computing, Communication and Networking (SMART GENCON);2023-12-29

2. Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs;IEEE Transactions on Device and Materials Reliability;2023-03

3. Local Bit-Line SRAM Architecture With Data-Aware Power-Gating Write Assist;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-01

4. Extremely Scaled Silicon Nanosheet Transistors;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

5. Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools;Russian Microelectronics;2022-12