Dual-gate silicon nanowire transistors with nickel silicide contacts-Reference-Cited by-同舟云学术

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Dual-gate silicon nanowire transistors with nickel silicide contacts

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
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Author:

Appenzeller J.,Knoch J.,Tutuc E.,Reuter M.,Guha S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154261.pdf?arnumber=4154261

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealing;Langmuir;2021-12-03

2. Lateral Extensions to Nanowires for Controlling Nickel Silicidation Kinetics: Improving Contact Uniformity of Nanoelectronic Devices;ACS Applied Nano Materials;2021-04-22

3. Reliability of CNTFET and NW-FET Devices;AI Techniques for Reliability Prediction for Electronic Components;2020

4. Metal-Semiconductor Compound Contacts to Nanowire Transistors;Nanostructure Science and Technology;2018-11-24

5. Functionality-Enhanced Devices: From Transistors to Circuit-Level Opportunities;Beyond-CMOS Technologies for Next Generation Computer Design;2018-08-21

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