High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack-Reference-Cited by-同舟云学术

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High mobility Si/SiGe strained channel MOS transistors with HfO/sub 2//TiN gate stack

Published: Issue: Volume: Page:
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Container-title:IEEE International Electron Devices Meeting 2003
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Author:

Datta S.,Dewey G.,Doczy M.,Doyle B.S.,Jin B.,Kavalieros J.,Kotlyar R.,Metz M.,Zelick N.,Chau R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8960/28396/01269365.pdf?arnumber=1269365

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dimensional Effect on Analog/RF Performance of Dual Material Gate Junctionless FinFET at 7 nm Technology Node;Transactions on Electrical and Electronic Materials;2023-05-08

2. Work-Function Variability impact on the performance of Vertically Stacked GAA FETs for sub-7nm Technology Node;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

3. Design and Deep Insights into Sub-10 nm Spacer Engineered Junctionless FinFET for Nanoscale Applications;ECS Journal of Solid State Science and Technology;2021-01-01

4. Impact of WFV on electrical parameters due to high-k/metal gate in SiGe channel tunnel FET;Microelectronic Engineering;2019-06

5. A 3D statistical simulation study of titanium metal gate WFV on electrical parameters in n-channel Ge step-FinFET;Applied Physics A;2018-01-09

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