Understanding STI edge fringing field effect on the scaling of charge-trapping (CT) NAND Flash and modeling of incremental step pulse programming (ISPP)-Reference-Cited by-同舟云学术

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Understanding STI edge fringing field effect on the scaling of charge-trapping (CT) NAND Flash and modeling of incremental step pulse programming (ISPP)

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lue Hang-Ting,Tzu-Hsuan Hsu ,Yi-Hsuan Hsiao ,Sheng-Chih Lai ,Erh-Kun Lai ,Shih-Ping Hong ,Ming-Tsung Wu ,Hsu F. H.,Lien N. Z.,Chi-Pin Lu ,Szu-Yu Wang ,Jung-Yu Hsieh ,Ling-Wu Yang ,Tahone Yang ,Kuang-Chao Chen ,Kuang-Yeu Hsieh ,Rich Liu ,Chih-Yuan Lu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424209.pdf?arnumber=5424209

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly parallel and ultra-low-power probabilistic reasoning with programmable gaussian-like memory transistors;Nature Communications;2024-03-18

2. Carbon nanotube memory cell array program error analysis and tradeoff between reset voltage and verify pulses;Japanese Journal of Applied Physics;2016-02-24

3. New program inhibition scheme for high boosting efficiency in three-dimensional NAND array;Japanese Journal of Applied Physics;2014-06-13

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