Ka-band 2.3W power AlGaN/GaN heterojunction FET-Reference-Cited by-同舟云学术

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Ka-band 2.3W power AlGaN/GaN heterojunction FET

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Kasahara K.,Miyamoto H.,Ando Y.,Okamoto Y.,Nakayama T.,Kuzuhara M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175929.pdf?arnumber=1175929

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhancing Double-Channel AlGaN/GaN HEMT Performance: Investigating the Influence of Gate Dielectric and Thickness;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02

2. A Tall Gate Stem GaN HEMT With Improved Power Density and Efficiency at Ka-Band;IEEE Journal of the Electron Devices Society;2023

3. Self heating Effects in GaN High Electron Mobility Transistor for Different Passivation Material;Defence Science Journal;2020-10-08

4. Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiOx capping layer by sputtering and post-annealing;Applied Surface Science;2017-04

5. Device Technology for GaN Mixed-Signal Integrated Circuits;Japanese Journal of Applied Physics;2013-11-01

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