Highly reliable Cu/low-k dual-damascene interconnect technology with hybrid (PAE/SiOC) dielectrics for 65 nm-node high performance eDRAM-Reference-Cited by-同舟云学术

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Highly reliable Cu/low-k dual-damascene interconnect technology with hybrid (PAE/SiOC) dielectrics for 65 nm-node high performance eDRAM

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Container-title:Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695)
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Author:

Kajita A.,Usui T.,Yamada M.,Ogawa E.,Katata T.,Sakata A.,Miyajima H.,Kojima A.,Kanamura R.,Ohoka Y.,Kawashima H.,Tabuchi K.,Nagahata K.,Kato Y.,Hayashi T.,Kadomura S.,Shibata H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8650/27411/01219697.pdf?arnumber=1219697

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnects;Applied Surface Science;2012-07

2. Substrate temperature dependence of electrical and structural properties of Ru films;Thin Solid Films;2011-10

3. Amorphous RuW Film as a Diffusion Barrier for Advanced Cu Metallization;Journal of The Electrochemical Society;2010

4. Ru/WCoCN as a seedless Cu barrier system for advanced Cu metallization;Applied Surface Science;2009-11

5. Low-k Dielectrics;Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications;2009

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