Tailoring the performance of silicon power diodes by predictive TCAD simulation of platinum-Reference-Cited by-同舟云学术

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Tailoring the performance of silicon power diodes by predictive TCAD simulation of platinum

Published:2018-05 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Hauf Moritz,Sandow Christian,Niedernostheide Franz-Josef,Schmidt Gerhard

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8387225/8393579/08393617.pdf?arnumber=8393617

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and Characterization of the Punchthrough n-p-n Diode for Hard Switching Power Control Applications;IEEE Transactions on Electron Devices;2023-09

2. A Fast and Soft Reverse Recovery Diode With a Punch-Through NPN Structure;IEEE Electron Device Letters;2023-01

3. A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices;physica status solidi (a);2021-11-20

4. Annealing of Pt‐H Defects in High‐Voltage Si p+/n− Diodes;physica status solidi (a);2019-07-05

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