Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique-Reference-Cited by-同舟云学术

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Development of the 1200V FZ-diode with soft recovery characteristics by the new local lifetime control technique

Published:2008-05 Issue: Volume: Page:
ISSN:
Container-title:2008 20th International Symposium on Power Semiconductor Devices and IC's
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Author:

Onozawa Y.,Takahashi K.,Nakano H.,Nemoto M.,Otsuki M.,Ikawa O.,Miyasaka T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4534810/4538873/04538902.pdf?arnumber=4538902

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A modified finite difference model to the reverse recovery of silicon PIN diodes;Solid-State Electronics;2020-09

2. Minimization of reverse recovery charge and forward voltage of silicon p–i–n diodes;Japanese Journal of Applied Physics;2016-02-24

3. Theoretical analysis of forward voltage and reverse recovery charge of silicon p–i–n diodes;Japanese Journal of Applied Physics;2015-01-21

4. Suppression of reverse recovery surge voltage of silicon power diode by adjusting trap energy levels through local lifetime control;Japanese Journal of Applied Physics;2014-01-01

5. 1200 V Schottky controlled injection diode: An advanced anode concept for low injection efficiency;Japanese Journal of Applied Physics;2014-01-01

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