Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer-Reference-Cited by-同舟云学术

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer

Published:2014-03 Issue:3 Volume:61 Page:742-746
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Li-Sheng,Liu Lu,Xu Jing-Ping,Zhu Shu-Yan,Huang Yuan,Lai Pui-To

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6746059/06714847.pdf?arnumber=6714847

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of (Sm_xGa_1−x)₂O₃ by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2022-12

2. Characteristics of In0.7Ga0.3As MOS Capacitors with Sulfur and Hydrazine Pretreatments;ECS Journal of Solid State Science and Technology;2021-09-01

3. Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications;IEEE Transactions on Electron Devices;2019-07

4. Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices;Semiconductor Science and Technology;2019-02-22

5. GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer;IEEE Transactions on Electron Devices;2018-01

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