Charge Pumping Measurements on Differently Passivated Lateral 4H-SiC MOSFETs-Reference-Cited by-同舟云学术

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Charge Pumping Measurements on Differently Passivated Lateral 4H-SiC MOSFETs

Published:2015-01 Issue:1 Volume:62 Page:155-163
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Salinaro Alberto¹,Pobegen Gregor²,Aichinger Thomas³,Zippelius Bernd⁴,Peters Dethard⁴,Friedrichs Peter⁴,Frey Lothar⁵

Affiliation:

1. Infineon Technologies AG, Erlangen, Germany

2. Kompetenzzentrum für Automobil-und Industrieelektronik, Villach, Austria

3. Infineon Technologies AG, Villach, Austria

4. Infineon Technologies AG Erlangen, Erlangen, Germany

5. Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, Germany

Funder

European Commission through the Marie Curie ITN NetFISiC Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6994894/06979263.pdf?arnumber=6979263

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs;Physical Review Applied;2024-08-30

2. Emission of Trapped Electrons from the 4H-SiC/SiO<sub>2</sub>-Interface via Photon-Irradiance at Cryogenic Temperatures;Defect and Diffusion Forum;2024-08-22

3. Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental;IEEE Transactions on Electron Devices;2024-07

4. Recent Developments in Understanding the Gate Switching Instability in Silicon Carbide MOSFETs;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08

5. Temperature-dependent electroluminescence of a gate pulsed silicon carbide metal–oxide–semiconductor field-effect transistor: Insight into interface traps;Journal of Applied Physics;2023-07-19

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