Dead Time Duration and Active Reset Influence on the Afterpulse Probability of InGaAs/InP Single-Photon Avalanche Diodes-Reference-Cited by-同舟云学术

Dead Time Duration and Active Reset Influence on the Afterpulse Probability of InGaAs/InP Single-Photon Avalanche Diodes

Published:2022-06 Issue:3 Volume:58 Page:1-11
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Losev Anton V.¹^ORCID,Zavodilenko Vladimir V.²^ORCID,Koziy Andrey A.²^ORCID,Filyaev Alexandr A.¹^ORCID,Khomyakova Kristina I.³,Kurochkin Yury V.¹,Gorbatsevich Alexander A.⁴^ORCID

Affiliation:

1. “QRate” LLC., Odintsovo, Skolkovo, Russia

2. NTI Center for Quantum Communications, National University of Science and Technology MISiS, Moscow, Russia

3. Laboratory of Quantum Information Technologies, National Research Tomsk State University, Tomsk, Russia

4. National Research University of Electronic Technology MIET, Zelenograd, Russia

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/9736675/09765989.pdf?arnumber=9765989

Reference47 articles.

1. Power law temporal dependence of InGaAs/InP SPAD afterpulsing

2. A Simple and Robust Method for Estimating Afterpulsing in Single Photon Detectors

3. High accuracy verification of a correlated-photon- based method for determining photoncounting detection efficiency

4. Quantum efficiency and dead time of single-photon counting photodiodes: a comparison between two measurement techniques

5. Absolute efficiency and time-response measurement of single-photon detectors

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