Linear Mode Avalanche Photodiodes With Antimonide Multipliers on InP Substrates-Reference-Cited by-同舟云学术

Linear Mode Avalanche Photodiodes With Antimonide Multipliers on InP Substrates

Published:2022-08 Issue:4 Volume:58 Page:1-7
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Krishna Sanjay¹^ORCID,Lee Seunghyun¹,Kodati Sri Harsha¹,Schwartz Mariah¹,Jung Hyemin¹,Ronningen Theodore J.¹^ORCID,Guo Bingtian²^ORCID,Jones Andrew H.²^ORCID,Winslow Martin³,Campbell Joseph C.²^ORCID,Grein Christoph H.³

Affiliation:

1. The Electrical and Computer Engineering Department, Ohio State University, Columbus, OH, USA

2. Electrical and Computer Engineering Department, University of Virginia, Charlottesville, VA, USA

3. Department of Physics, University of Illinois at Chicago, Chicago, IL, USA

Funder

Directed Energy–Joint Technology Office

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/9843922/09740625.pdf?arnumber=9740625

Reference47 articles.

1. Nonlocal impact ionization and avalanche multiplication

2. Effect of dead space on gain and noise of double-carrier-multiplication avalanche photodiodes

3. AlInAsSb avalanche photodiodes on InP substrates

4. Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates

5. Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates

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