Investigation of the surge current capability of the body diode of SiC MOSFETs for HVDC applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7588973/7695111/07695448.pdf?arnumber=7695448
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Modelling and Evalaution of the Bidirectional Surge Current Robustness of Si(-IGBT and -Diode), SiC(-MOSFETs and -JFET) and GaN(-HEMTs) Devices;Energies;2024-08-31
2. Comparison of Short-Term Over-current Capability of SiC Devices using Microchannel Cooling below and on top of the Chip;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
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4. Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip;Energies;2024-01-17
5. Comparison of Top and Bottom Cooling for Short Duration of Over-Currents for SiC Devices: An Analysis of the Quantity and Location of Heat-Absorbing Materials;IEEE Open Journal of Power Electronics;2024
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