A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage-Reference-Cited by-同舟云学术

A Drain–Source Connection Technique: Thermal Resistance Measurement Method for GaN HEMTs Using TSEP at High Voltage

Published:2020-12 Issue:12 Volume:67 Page:5454-5459
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Li Xuan^ORCID,Feng Shiwei^ORCID,Liu Chang^ORCID,Zhang Yamin^ORCID,Bai Kun^ORCID,Xiao Yuxuan,Zheng Xiang^ORCID,He Xin^ORCID,Pan Shijie^ORCID,Lin Gang,Bai Lin

Funder

BeijingMunicipal Education Commission

National Natural Science Foundation of China

Beijing Natural Science Foundation

Science and Technology on Reliability Physics and Application of Electronic Component Laboratory

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9269285/09253579.pdf?arnumber=9253579

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