High Temperature Resistant Packaging Technology for SiC Power Module by Using Ni Micro-Plating Bonding-Reference-Cited by-同舟云学术

High Temperature Resistant Packaging Technology for SiC Power Module by Using Ni Micro-Plating Bonding

Published:2019-05 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE 69th Electronic Components and Technology Conference (ECTC)
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Author:

Tatsumi Kohei,Morisako Isamu,Wada Keiko,Fukuomori Minoru,Iizuka Tomonori,Sato Nobuaki,Shimizu Koji,Ueda Kazutoshi,Hikita Masayuki,Kamimura Rikiya,Kawanabe Naoki,Sugiura Kazuhiko,Tsuruta Kazuhiro,Toda Keiji

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8795274/8811008/08811270.pdf?arnumber=8811270

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Low-Thermal-Stress Double-Sided Cooling Wire-Bondless Package Structure of SiC Power Modules for High-Temperature Applications;IEEE Transactions on Power Electronics;2024-11

2. A High-reliability SiC-based Power Module with High-Temperature Co-fired Ceramic Interposer for High-temperature Applications;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Reliability evaluation of thick Ag wire bonding on Ni pad for power devices;Microelectronics Reliability;2024-01

4. A new method of joining stainless steels using Ni micro-plating bonding and the mechanical properties of the joint;Welding International;2023-05-08

5. New interconnection technologies based on Ni nano-particle and Ni micro-plating bonding with stress relaxation effect for high-temperature resistant power device packaging;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05