Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires-Reference-Cited by-同舟云学术

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Droplet contact angle controlling the morphology and crystal phase of GaAs and GaP nanowires

Published:2022-06-20 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference Laser Optics (ICLO)
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Author:

Dubrovskii V. G.¹,Sibirev N. V.¹,Fedorov V. V.²,Dvoretckaia L. N.²,Kirilenko D. A.³,Mukhin I. S.²,Ghukasyan A.⁴,Goktas N. I.⁴,LaPierre R. R.⁴

Affiliation:

1. St. Petersburg State University,Faculty of Physics,St. Petersburg,Russia,199034

2. Alferov University,Nanotechnology Research and Education Centre,St. Petersburg,Russia,194021

3. Ioffe Institute,St. Petersburg,Russia,194021

4. McMaster University,Department of Engineering Physics,Hamilton,ON,Canada,L8S4L7

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9839664/9839667/09840250.pdf?arnumber=9840250

Reference6 articles.

1. Formation Mechanism of Twinning Superlattices in Doped GaAs Nanowires

2. Phase Selection in Self-catalyzed GaAs Nanowires

3. Phase Diagram for Twinning Superlattice Te-Doped GaAs Nanowires

4. Formation of wurtzite sections in self-catalyzed GaP nanowires by droplet consumption

5. Development of Growth Theory for Vapor–Liquid–Solid Nanowires: Contact Angle, Truncated Facets, and Crystal Phase

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