Reliability acceleration model of stacked ZrO<inf>2</inf>-Al<inf>2</inf>O<inf>3</inf>-ZrO<inf>2</inf> MIM capacitor with cylinder type-Reference-Cited by-同舟云学术

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Reliability acceleration model of stacked ZrO2-Al2O3-ZrO2 MIM capacitor with cylinder type

Published:2008-05 Issue: Volume: Page:
ISSN:
Container-title:2008 26th International Conference on Microelectronics
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Author:

Seo Jae Yong,Seok Jung Eun,kim Hyun Joo,Kim Hyun Jung,Park Hong Sik,Jeon Jae Eun,Lee Won Shik

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4545382/4559204/04559337.pdf?arnumber=4559337

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fundamental roles of extreme-value distributions in dielectric breakdown and memory applications (minimum-value versus maximum-value statistics);Japanese Journal of Applied Physics;2020-06-01

2. Effect of Heat Budget After Capacitor Formation on the Leakage Current Characteristics of ZrO2-Based High-k Dielectrics for Next-Generation Dynamic Random-Access Memory Capacitors;Journal of Nanoscience and Nanotechnology;2020-01-01

3. Facts and Myths of Dielectric Breakdown Processes—Part I: Statistics, Experimental, and Physical Acceleration Models;IEEE Transactions on Electron Devices;2019-11

4. Reliability Comparison of ZrO2-Based DRAM High-k Dielectrics Under DC and AC Stress;IEEE Transactions on Device and Materials Reliability;2017-06

5. Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications;Journal of Applied Physics;2015-06-14

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