Current gain rolloff in graded-base SiGe heterojunction bipolar transistors-Reference-Cited by-同舟云学术

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Current gain rolloff in graded-base SiGe heterojunction bipolar transistors

Published:1993-04 Issue:4 Volume:14 Page:193-195
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Crabbe E.F.,Cressler J.D.,Patton G.L.,Stork J.M.,Comfort J.H.,Sun J.Y.-C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/5620/00215153.pdf?arnumber=215153

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