GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology-Reference-Cited by-同舟云学术

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GaN on Low-Resistivity Silicon THz High-Q Passive Device Technology

Published:2016 Issue: Volume: Page:1-5
ISSN:2156-342X
Container-title:IEEE Transactions on Terahertz Science and Technology
language:
Short-container-title:IEEE Trans. THz Sci. Technol.

Author:

Eblabla Abdalla Mohamed,Li Xu,Wallis David J.,Guiney Ivor,Elgaid Khaled

Funder

EPSRC

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Radiation

Link

http://xplorestaging.ieee.org/ielx7/5503871/5741778/07725538.pdf?arnumber=7725538

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A W-Band Chebyshev Waveguide Bandpass Filter with Wide Stopband Performance;Electronics;2024-05-06

2. Exploring Low-Loss Wideband Substrate-Integrated Image Guides (SIIG) for Terahertz Applications;IEEE Transactions on Terahertz Science and Technology;2024-01

3. Analytical Model of Guided Waves in Periodically Perforated Dielectric Structure and Its Applications to Terahertz Substrate-Integrated Image Guide (SIIG);IEEE Transactions on Microwave Theory and Techniques;2023-10

4. Low-Loss MIM Capacitor on Thick SiO₂ Dielectric for GaN-on-Si Substrates with Standard and Elevated Top Electrode Configurations;2023 53rd European Microwave Conference (EuMC);2023-09-19

5. Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector With High Responsivity and High Detectivity;IEEE Electron Device Letters;2023-05

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