Low Switching Loss Dual RESURF 40 V N-LDMOS with Grounded Field Plate for DC-DC Converters-Reference-Cited by-同舟云学术

Low Switching Loss Dual RESURF 40 V N-LDMOS with Grounded Field Plate for DC-DC Converters

Published:2022-08-07 Issue: Volume: Page:
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Container-title:2022 IEEE 65th International Midwest Symposium on Circuits and Systems (MWSCAS)
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Author:

Du Hao Yang¹,Matsuda Jun-Ichi¹,Kuwana Anna¹,Kobayashi Haruo¹

Affiliation:

1. Gunma University 1-5-1, Tenjin-cho Kiryu,Division of Electronics and Informatics,Gunma,Japan

Publisher

IEEE

Link

Reference5 articles.

1. Device Simulation;yamaguchi;Advance Simulation (AdvanceSoft Corporation),2015

2. Analysis of Switching Characteristics of Dual RESURF 40 V N-LDMOS Transistor with Grounded Field Plate;du;Proceedings of ICT,2021

4. Low Switching Loss and Scalable 20-40 V LDMOS Transistors with Low Specific On-Resistance;matsuda;Proceedings of ICT,2018

5. A Low Switching Loss 40 V Dual RESURF LDMOS Transistor with Low Specific On-Resistance;matsuda;Proc ICME,2017

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1. ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect;2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan);2023-07-17