Common-Source Inductance Induced Voltage Overshoot and Oscillation in Active Bidirectional Devices-Reference-Cited by-同舟云学术

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Common-Source Inductance Induced Voltage Overshoot and Oscillation in Active Bidirectional Devices

Published:2021-12 Issue:12 Volume:36 Page:13383-13388
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Fan Boran^ORCID,Baker Victoria,Burgos Rolando^ORCID,Chamie Mahmoud El,Chen Warren,Blasko Vladimir,Boroyevich Dushan^ORCID

Funder

The Advanced Research Project Agency Energy ARPA-E

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9519819/09431652.pdf?arnumber=9431652

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of Snubber on Switching Times of SiC MOSFET based 4-quadrant Switch;2023 11th National Power Electronics Conference (NPEC);2023-12-14

2. A Novel SiC Device Model With Power Stage and Gate Driver Uncoupled;IEEE Transactions on Industry Applications;2023-07

3. Quadruple-three-phase Drive Systems and Related Operating Methods for Common-mode Noise Cancellation and DC Ripple Reduction;2023 IEEE International Electric Machines & Drives Conference (IEMDC);2023-05-15

4. PCB Busbar Design and Verification for a Multiphase 250 kW SiC based All-electric Aircraft Powertrain Converter;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

5. Switching Investigation of SiC MOSFET Based 4-Quadrant Switch;IEEE Access;2023

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