Active Gate Driver IC Integrating Gate Voltage Sensing Technique for SiC MOSFETs-Reference-Cited by-同舟云学术

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Active Gate Driver IC Integrating Gate Voltage Sensing Technique for SiC MOSFETs

Published:2024-07 Issue:7 Volume:39 Page:8562-8571
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Wang Ting-Wei¹^ORCID,Chen Ling-Chia¹^ORCID,Takamiya Makoto²^ORCID,Chen Po-Hung¹^ORCID

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Institute of Industrial Science, University of Tokyo, Tokyo, Japan

Funder

National Science and Technology Council, Taiwan

National Yang Ming Chiao Tung University

Ministry of Education, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10534153/10486993.pdf?arnumber=10486993

Reference33 articles.

1. A Maximum Power Density Design Method for Nine Switches Matrix Converter Using SiC-MOSFET

2. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

3. High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

4. A Novel Pulse-Width Modulation Method for Reactive Power Generation on a CoolMOS- and SiC-Diode-Based Transformerless Inverter

5. Impact of SiC Devices on Hybrid Electric and Plug-In Hybrid Electric Vehicles

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