A Switching Oscillation Suppression Method With Clamping Function and Quantitative Design for SiC MOSFETs-Reference-Cited by-同舟云学术

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A Switching Oscillation Suppression Method With Clamping Function and Quantitative Design for SiC MOSFETs

Published:2024-06 Issue:6 Volume:39 Page:7076-7085
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Chen Jian¹^ORCID,Song Wensheng¹^ORCID,Xu Jianping¹^ORCID,Yue Hao¹^ORCID,Luo Quanming²^ORCID,Mantooth Homer Alan³^ORCID

Affiliation:

1. School of Electrical Engineering, Southwest Jiaotong University, Chengdu, China

2. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China

3. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA

Funder

Sichuan Science and Technology Program

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10505873/10452843.pdf?arnumber=10452843

Reference30 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices

3. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules

4. A Complete Switching Analytical Model of Low-Voltage eGaN HEMTs and Its Application in Loss Analysis

5. Impact of $RC$ Snubber on Switching Oscillation Damping of SiC MOSFET With Analytical Model

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