Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier
Author:
Affiliation:
1. imec,Belgium
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865258.pdf?arnumber=9865258
Reference10 articles.
1. AlGaN/GaN HEMT With 300-GHz $f_{\max}$
2. Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
3. CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance
4. Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Large-Signal Characterisation and Analysis of AlN/GaN MISHEMTs on Si with a PAE > 62% at 28 GHz;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16
2. A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11
3. Low-Voltage Operation AlInN/GaN HEMTs on Si with High Output Power at sub-6 GHz;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
4. Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers;Japanese Journal of Applied Physics;2023-02-06
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