A 300-GHz Band Chip-to-Waveguide Transition on Proton-Irradiated Standard 65nm CMOS Si Substrate for Flip-Chip Packaging Implementation
Author:
Affiliation:
1. Tokyo Institute of Technology,Japan
2. SHI-ATEX Co. Ltd.,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865453.pdf?arnumber=9865453
Reference11 articles.
1. 22.2 A 300GHz-Band Phased-Array Transceiver Using Bi-Directional Outphasing and Hartley Architecture in 65nm CMOS
2. All Active MMIC-Based Wireless Communication at 220 GHz
3. Isolation on si wafers by mev proton bombardment for rf integrated circuits;lee;IEEE Transactions on Electron Devices,2001
4. A 280-/300-GHz Three-Stage Amplifiers in 65-nm CMOS With 12-/9-dB Gain and 1.6/1.4% PAE While Dissipating 17.9 mW
5. Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate
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