High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology-Reference-Cited by-同舟云学术

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High sigma measurement of random threshold voltage variation in 14nm Logic FinFET technology

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 Symposium on VLSI Technology (VLSI Technology)
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Author:

Giles M. D.,Arkali Radhakrishna N.,Becher D.,Kornfeld A.,Maurice K.,Mudanai S.,Natarajan S.,Newman P.,Packan P.,Rakshit T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7198535/7223619/07223657.pdf?arnumber=7223657

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silent Data Corruption from Timing Marginalities Due to Process Variations;2024 IEEE European Test Symposium (ETS);2024-05-20

2. Efficient Implementation of Mahalanobis Distance on Ferroelectric FinFET Crossbar for Outlier Detection;IEEE Journal of the Electron Devices Society;2024

3. Ferroelectric FET Nonvolatile Sense-Amplifier-Based Flip-Flops for Low Voltage Operation;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-01

4. An Energy Selective Antenna Based on the Folded Dipole Structure and PIN Diodes;IEEE Transactions on Electromagnetic Compatibility;2023-12

5. Understanding Distance-Dependent Variations for Analog Circuits in a FinFET Technology;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

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