RMG nMOS 1<sup>st</sup> process enabling 10x lower gate resistivity in N7 bulk FinFETs-Reference-Cited by-同舟云学术

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RMG nMOS 1^st process enabling 10x lower gate resistivity in N7 bulk FinFETs

Published:2015-06 Issue: Volume: Page:
ISSN:
Container-title:2015 Symposium on VLSI Technology (VLSI Technology)
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Author:

Ragnarsson L.-A.,Dekkers H.,Schram T.,Chew S. A.,Parvais B.,Dehan M.,Devriendt K.,Tao Z.,Sebaai F.,Baerts C.,Van Elshocht S.,Yoshida N.,Phatak A.,Lazik C.,Brand A.,Clark W.,Fried D.,Mocuta D.,Barla K.,Horiguchi N.,Thean A. V.-Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7198535/7223619/07223656.pdf?arnumber=7223656

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration;Materials Science in Semiconductor Processing;2024-06

2. Significant Threshold Voltage Lowering Induced by Contact Silicidation Annealing of FinFET;IEEE Transactions on Electron Devices;2023-08

3. Device Scaling roadmap and its implications for Logic and Analog platform;2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2020-11-16

4. Novel Band-Edge Work Function Performance Modulation via NPT with PMOS1st/NMOS1st Laminated Stack for PMOS Low Power Target;ECS Journal of Solid State Science and Technology;2020-11-02

5. Properties of ALD TaxNy films as a barrier to aluminum in work function metal stacks;Journal of Applied Physics;2018-10-28

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