Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics-Reference-Cited by-同舟云学术

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Development of New TiN/ZrO2/Al2O3/ZrO2/TiN Capacitors Extendable to 45nm Generation DRAMs Replacing HfO2 Based Dielectrics

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers.
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Author:

Kil D.-S.,Song H.-S.,Lee K.-J.,Hong K.,Kim J.-H.,Park K.-S.,Yeom S.-J.,Roh J.-S.,Kwak N.-J.,Sohn H.-C.,Kim J.-W.,Park S.-W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/11173/35986/01705205.pdf?arnumber=1705205

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced TDDB-Reliability of Ultra-Thin Zirconia Capacitors Featuring Al-Doped Oxide Layers;IEEE Electron Device Letters;2024-06

2. Suppressing Interfacial Layer Formation in ZrO₂-Based Capacitors with TiN Electrodes via a MgO Thin-Film Oxygen Diffusion Barrier;ACS Applied Electronic Materials;2024-04-24

3. Pure ZrO₂ Ferroelectric Thin Film for Nonvolatile Memory and Neural Network Computing;ACS Applied Materials & Interfaces;2024-04-16

4. Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties;Surfaces and Interfaces;2023-11

5. Emergence of ferroelectricity in ZrO2 thin films on TiN/Si featuring high temperature sputtering method;Materials Science in Semiconductor Processing;2023-08

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