Sub-100 nm regrown S/D Gate-Last In<inf>0.7</inf>Ga<inf>0.3</inf>As QW MOSFETs with μ<inf>n,eff</inf> > 5,500 cm<sup>2</sup>/V-s-Reference-Cited by-同舟云学术

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Sub-100 nm regrown S/D Gate-Last In0.7Ga0.3As QW MOSFETs with μn,eff > 5,500 cm²/V-s

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
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Author:

Shin C.-S.,Park W.-K.,Shin SH.,Cho YD.,Ko DH.,Kim T.-W.,Koh D.H.,Kwon HM.,Hill R. J. W.,Kirsch P.,Maszara W.,Kim D.-H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6886509/6894335/06894351.pdf?arnumber=6894351

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of in-situ Zn doping on suppression of phase separation in In Al1−As epitaxial layer on InP(001) grown by MOCVD;Journal of Alloys and Compounds;2023-09

2. Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s;Solid-State Electronics;2023-08

3. Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate;Micromachines;2022-12-25

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