Anomaly of NBTI data for PMOS transistors degraded by plasma processing induced charging damage (PID)
Author:
Affiliation:
1. Infineon Technologies AG,Corporate Reliability Department,Neubiberg,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10032732/10032733/10032757.pdf?arnumber=10032757
Reference19 articles.
1. A fast Wafer Level Reliability (fWLR) Monitoring concept as a continuous reliability indicator for wafer mass production
2. A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs
3. Fast wafer level reliability monitoring as a tool to achieve automotive quality for a wafer process
4. Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation
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1. Layout Guidelines against Charging Damage from the Well-Side Antennas in Separated Power Domains;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14
2. On the Role of NBTI and PBTI Induced Mobility Degradation for Compact Modeling in Metal-Gate/High-k FETs;2023 IEEE International Integrated Reliability Workshop (IIRW);2023-10-08
3. Plasma Induced Charging Damage Causing MOS Device Reliability Lifetime Degradation Originating From Well Charging of a Technology With Deep Trench Isolation;IEEE Transactions on Device and Materials Reliability;2023-09
4. Plasma induced charging damage (PID) from well charging in a BCD technology with deep trenches causing MOS device reliability lifetime degradation;2022 IEEE International Integrated Reliability Workshop (IIRW);2022-10-09
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