Correlation between 1/f noise and h/sub FE/ long-term instability in silicon bipolar devices-Reference-Cited by-同舟云学术

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Correlation between 1/f noise and h/sub FE/ long-term instability in silicon bipolar devices

Published:1991 Issue:11 Volume:38 Page:2540-2547
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yiqi Zhuang ,Qing Sun

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/3091/00097420.pdf?arnumber=97420

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of the nanotube oxidation on the rheological and electrical properties of CNT/HDPE nanocomposites;Polymer Engineering & Science;2017-04-04

2. Radiation-induced 1/ f noise degradation of PNP bipolar junction transistors at different dose rates;Chinese Physics B;2016-04

3. $1/f$ Noise Model for NPN Bipolar Junction Transistors Based on Radiation Effect;IEEE Transactions on Nuclear Science;2015-08

4. Model of radiation-induced gain degradation of NPN bipolar junction transistor at different dose rates;Journal of Semiconductors;2015-06

5. A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation1/f noise;Acta Physica Sinica;2012

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