A Novel NH<sub>3</sub> Sensing Mechanism Based on Au Pads Activated Schottky Barrier MOSFET on Silicon-on-Insulator With Extremely High Sensitivity at Room Temperature-Reference-Cited by-同舟云学术

A Novel NH₃ Sensing Mechanism Based on Au Pads Activated Schottky Barrier MOSFET on Silicon-on-Insulator With Extremely High Sensitivity at Room Temperature

Published:2024 Issue: Volume:73 Page:1-6
ISSN:0018-9456
Container-title:IEEE Transactions on Instrumentation and Measurement
language:
Short-container-title:IEEE Trans. Instrum. Meas.

Author:

Xiao Kai¹^ORCID,Wang Haihua²^ORCID,Xie Hui¹^ORCID,Li Siyuan¹^ORCID,Zhao Zekun³^ORCID,Cui Ziyue³^ORCID,Chen Qiumeng²^ORCID,Zhou Peng³^ORCID,Liu Fanyu⁴^ORCID,Xu Yong²^ORCID,Jiang Yu-Long³^ORCID,Wan Jing¹^ORCID

Affiliation:

1. Shanghai Institute of Intelligent Electronics and Systems, School of Information Science and Technology, Fudan University, Shanghai, China

2. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

3. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China

4. Key Laboratory of Silicon Device and Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications

Shanghai Science and Technology Commission “Explorer Project”

Natural Science Foundation of Shanghai

Guangdong Province Research and Development in Key Fields from Guangdong Greater Bay Area Institute of Integrated Circuit and System

Guangzhou City Research and Development Program in Key Field

Project funded by China Postdoctoral Science Foundation

Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/19/10367905/10522908.pdf?arnumber=10522908

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