Spatial position of deep levels near the Si—SiO2interface of ion implanted MOS structures
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31756/01478597.pdf?arnumber=1478597
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Origin of the hole gas at the Si(111):Cl surface: Role of surface electronic structure, impurities, and defects;Physical Review B;2006-05-02
2. Halogens;Computational Microelectronics;2004
3. Halogen impurities in silicon: Shallow single donors;Applied Physics Letters;1997-08-11
4. Interface and Bulk Oxide Damage Induced by Boron Implantation;MRS Proceedings;1985
5. Donor generation in monocrystalline silicon by halogen implantation;Solid-State Electronics;1983-03
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