Employing Total Ionizing Dose Effect in PN-Junction Photodetectors Implemented in Standard CMOS Technology for Dosimetry Application
Author:
Affiliation:
1. University of Guilan,Faculty of Sciences,Rasht,IR
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9875398/9875424/09875917.pdf?arnumber=9875917
Reference7 articles.
1. A new guard ring for radiation induced noise reduction in photodiodes implemented in 0.18 μm CMOS technology
2. Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements
3. A Review: Photonic Devices Used for Dosimetry in Medical Radiation
4. A radiationhardened wide spectral response 4t cmos image sensor pixel employing a through-silicon via based photodetector;pil-ali;2021 IEEE International IOT Electronics and Mechatronics Conference (IEMTRONICS),2021
5. Characterization of a low-cost PIN photodiode for dosimetry in diagnostic radiology
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