A Wideband 77-GHz Power Amplifier with Mixed Matching Network in 130-nm BiCMOS Technology
Author:
Affiliation:
1. Nanjing University of Science and Technology,Ministerial Key Laboratory of JGMT,Nanjing,China
Funder
National Natural Science Foundation of China
Jiangsu Science and Technology Department
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9790088/9790091/09790252.pdf?arnumber=9790252
Reference6 articles.
1. A High-Linearity Adaptive-Bias SiGe Power Amplifier for 5G Communication
2. 77–110 GHz 65-nm CMOS Power Amplifier Design
3. A 77GHz CMOS medium power amplifier with transmission line transformers for multi-mode automotive radar system
4. A Transformer-Coupling Current-Reuse SiGe HBT Power Amplifier for 77-GHz Automotive Radar
5. A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon
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1. Systematic Design Methodology for CMOS Millimeter-Wave Power Amplifiers With an E-Band Fully Differential Implementation in 16-nm FinFET;IEEE Transactions on Microwave Theory and Techniques;2024-08
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