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2. A New High Efficiency Power Amplifier for Modulated Waves
3. 0.18 μm BCD Technology Platform with Performance and Cosr Optimized Fully Isolated LDMOS;Purakh;EDSSC,2015
4. 7 to 30V state-of-art power device implementation in 0.25 um LBC7 BiCMOS-DMOS process technology;Pendharkar;Proc.of ISPSD,2004
5. A 0.25 um CMOS based 70V smart power technology with deep trench for high-voltage isolation;Parthasarathy;IEDM,2002