Breakdown Voltage Improvement of LDMOS by CESL Optimization in High-Voltage 90 NM BCD Technology

Author:

Tian Ye1,Chen Tian1,Zhang Xiang1,Li Kui1,Wang Li1,Chen Hualun1

Affiliation:

1. Huahong Semiconductor (Wuxi) Limited,Wuxi,China,214000

Publisher

IEEE

Reference11 articles.

1. BCD8 from 7V to 70V: a new 0.18 um technology platform to address the evolution of applications towards smart power ICs with high logic contents;Riccardi;Proc. of ISPSD,2007

2. A New High Efficiency Power Amplifier for Modulated Waves

3. 0.18 μm BCD Technology Platform with Performance and Cosr Optimized Fully Isolated LDMOS;Purakh;EDSSC,2015

4. 7 to 30V state-of-art power device implementation in 0.25 um LBC7 BiCMOS-DMOS process technology;Pendharkar;Proc.of ISPSD,2004

5. A 0.25 um CMOS based 70V smart power technology with deep trench for high-voltage isolation;Parthasarathy;IEDM,2002

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