A 111-149-GHz, Compact Power-combined Amplifier With 17.5-dBm $P_{sat}$, 16.5% PAE in 22-nm CMOS FD-SOI
Author:
Affiliation:
1. University of California, Santa Barbara,Department of Electrical and Computer Engineering,Santa Barbara,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9911257/9911222/09911290.pdf?arnumber=9911290
Reference11 articles.
1. Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns
2. High Efficiency D-Band Multiway Power Combined Amplifiers With 17.5–19-dBm Psat and 14.2–12.1% Peak PAE in 45-nm CMOS RFSOI
3. Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances
4. Compact Series Power Combining Using Subquarter-Wavelength Baluns in Silicon Germanium at 120 GHz
5. A 140 GHz T/R Front-End Module in 22 nm FD-SOI CMOS
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2. Phased-Array-Compatible Area-Efficient D-Band Power Amplifiers in 45 RF SOI based on Cascade Stacking;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
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4. An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
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