High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface-Reference-Cited by-同舟云学术

High Voltage SiC Power Module Optimized for Low Parasitics and Compatible System Interface

Published:2022-03-20 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Applied Power Electronics Conference and Exposition (APEC)
language:
Short-container-title:

Author:

Li Xiaoling¹,Chen Yuxiang¹,Wu Yuheng¹,Chen Hao¹,Weber William²,Nasiri Adel³,Cuzner Robert²,Zhao Yue¹,Mantooth Alan¹

Affiliation:

1. Univerisity of Arkansas,Department of Electrical Engineering,Fayetteville,AR,USA

2. College of Engineering and Applied Science, University of Wisconsin-Milwaukee,Milwaukee,WI,USA

3. College of Engineering and Computing, University of South Carolina,Columbia,SC,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9773364/9773365/09773726.pdf?arnumber=9773726

Reference13 articles.

1. 10-kV SiC MOSFET Power Module With Reduced Common-Mode Noise and Electric Field

2. Compact, higherature, single-level power modules for 10 to 25 kV DC link voltages using silicon carbide power electronics;o'neal;IEEE Int Work Integr Power Packag IWIPP 2015,0

3. Investigation, Evaluation, and Optimization of Stray Inductance in Laminated Busbar

4. Three-phase 4.16 kV medium voltage grid tied AC-DC converter based on 15 kV/40 a SiC IGBTs

5. Design and Optimization of SiC MOSFET Wire Bondless Power Modules

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 10 kV SiC MOSFET Power Module With Optimized System Interface and Electric Field Distribution;IEEE Transactions on Power Electronics;2024-08

2. Comparative Evaluation of 10 kV SiC MOSFET Power Module Insulation Ability Through Chip Neighborhood Range Electric Field Modelling;2024 IEEE 7th International Electrical and Energy Conference (CIEEC);2024-05-10

3. Characterizations and Converter Design Using the Latest 6.5 kV Silicon Carbide MOSFETs;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

4. Comprehensive Analysis and Optimization of Parasitic Capacitance on Conducted EMI and Switching Losses in Hybrid-Packaged SiC Power Modules;IEEE Transactions on Power Electronics;2023-11

5. Fabrication Process Optimization of A High- Power Double-Sided Cooled SiC Power Module;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29