Stabilizing Schemes for the Minority Failure Bits in Ta2O5-Based ReRAM Macro-Reference-Cited by-同舟云学术

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Stabilizing Schemes for the Minority Failure Bits in Ta2O5-Based ReRAM Macro

Published:2017-02 Issue:2 Volume:64 Page:419-426
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ueki Makoto,Hayashi Yoshihiro^ORCID,Furutake Naoya,Masuzaki Koji,Tanabe Akira,Narihiro Mitsuru,Sunamura Hiroshi,Uejima Kazuya,Mitsuiki Akira,Takeda Koichi,Hase Takashi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7828063/07828065.pdf?arnumber=7828065

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methods to Realize Low-BER and High-Reliability RRAM Chip With Fast Page-Forming Capability;IEEE Transactions on Electron Devices;2023-02

2. High temperature stability embedded ReRAM for 2x nm node and beyond;2022 IEEE International Memory Workshop (IMW);2022-05

3. NanoBridge Technology for Novoaltile FPGA and Memory Applications : (Invited);2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

4. ON-state retention of Atom Switch eNVM for IoT/AI Inference Solution;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04

5. eNVM RRAM reliability performance and modeling in 22FFL FinFET technology;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04

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