Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction-Reference-Cited by-同舟云学术

Impact of Voltage Polarity on Time-Dependent Dielectric Breakdown of 1-nm MgO-Based STT-MRAM With Self-Heating Correction

Published:2023-01 Issue:1 Volume:70 Page:76-82
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Tan Joel¹^ORCID,Lim Jia Hao²,Sikder Bejoy³^ORCID,Baten Md. Zunaid³^ORCID,Kwon Jae Hyun²,Yamane Kazutaka²,Naik Vinayak Bharat²,Raghavan Nagarajan¹^ORCID,Pey Kin Leong¹^ORCID

Affiliation:

1. Engineering Product Development (EPD) Pillar, Singapore University of Technology and Design (SUTD), Tampines, Singapore

2. GlobalFoundries, 60 Woodlands Industrial Park D St 2, Singapore

3. Department of Electrical and Electronic Engineering (EEE), Bangladesh University of Engineering and Technology (BUET), Dhaka, Bangladesh

Funder

Economic Development Board (EDB), Singapore University of Technology and Design (SUTD) through the Industry Postgraduate Program (IPP) on STT-MRAM Devices with GlobalFoundries

A*STAR BRENAIC Research Project for Open Access publication

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10004030/09950426.pdf?arnumber=9950426

Reference39 articles.

1. A reliable TDDB lifetime projection model verified using 40 Mb STT-MRAM macro at sub-ppm failure rate to realize unlimited endurance for cache applications;naik;Proc IEEE Symp VLSI Technol,2020

2. Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics

3. 12.5 Mb/mm2 embedded MRAM for high density non-volatile RAM applications;suh;Proc Symp VLSI Technol,2021

4. Effect of electric-field on the perpendicular magnetic anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions

5. Edge-induced reliability & performance degradation in STT-MRAM: an etch engineering solution

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