A Holistic Evaluation of Buried Power Rails and Back-Side Power for Sub-5 nm Technology Nodes
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA
2. ARM Research, Austin, TX, USA
3. imec, Leuven, Belgium
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9839401/09817394.pdf?arnumber=9817394
Reference19 articles.
1. Extreme Wafer Thinning and nano-TSV processing for 3D Heterogeneous Integration
2. Enabling logic with backside connectivity via n-TSVs and its potential as a scaling booster;veloso;Proc Symp VLSI Technol,2021
3. DTCO exploration for efficient standard cell power rails;chava;Proc SPIE,2018
4. External I/O interfaces in sub-5 nm GAA NS technology and STCO scaling options;chen;Proc Symp VLSI Technol,2021
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