Modeling Multigate Negative Capacitance Transistors With Self-Heating Effects-Reference-Cited by-同舟云学术

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Modeling Multigate Negative Capacitance Transistors With Self-Heating Effects

Published:2022-06 Issue:6 Volume:69 Page:3029-3036
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jiao Yanxin¹^ORCID,Huang Xiaoqing¹^ORCID,Rong Zhao¹,Ji Zhigang²^ORCID,Wang Runsheng³^ORCID,Zhang Lining¹^ORCID

Affiliation:

1. School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, China

2. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai, China

3. School of Integrated Circuits, Peking University, Beijing, China

Funder

Natural Science Foundation of China

Major Scientific Instruments and Equipments Development

Shenzhen Fundamental Research Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09768104.pdf?arnumber=9768104

Reference36 articles.

1. A unified mobility model for device simulation

2. Ferroelectricity of nondoped thin HfO2films in TiN/HfO2/TiN stacks

3. Layout Design Correlated With Self-Heating Effect in Stacked Nanosheet Transistors

4. Pyroelectric and electrocaloric effects in ferroelectric silicon-doped hafnium oxide thin films

5. Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

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