Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications-Reference-Cited by-同舟云学术

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Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications

Published:2022-05 Issue:5 Volume:69 Page:2256-2261
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhao Biyao¹^ORCID,Bi Jinshun¹^ORCID,Ma Yue¹,Zhang Jian²^ORCID,Wang Yan²^ORCID,Fan Linjie¹^ORCID,Han Tingting³,Stempitsky Viktor⁴

Affiliation:

1. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. School of Integrated Circuits, Tsinghua University, Beijing, China

3. Nanjing Electronic Equipment Institute, Nanjing, China

4. R&D Department, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09755970.pdf?arnumber=9755970

Reference26 articles.

1. Substrate Engineering of Inductors on SOI for Improvement of Q-Factor and Application in LNA

2. Large-area femtosecond laser milling of silicon employing trench analysis

3. Half-Terahertz SiGe BiCMOS technology

4. Ultra-low noise and low power 18.7 GHz radiometer LNAs in a 0.5 THz SiGe technology utilizing back-side etched inductors

5. Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The impacts of localized backside etching on proton radiation response in SOI passive devices;Japanese Journal of Applied Physics;2023-02-01

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