Ge Content Optimization in Ge(SbSe)N OTS Materials for Selector Applications
Author:
Affiliation:
1. CEA, LETI, Université Grenoble Alpes, Grenoble, France
2. INSA Lyon, ECL, CNRS, UCBL, CPE Lyon, INL, UMR 5270, Université de Lyon, Villeurbanne, France
3. Ampere-UMR 5005, INSA Lyon, Université de Lyon, Villeurbanne, France
Funder
European Commission
French State
Auvergne-Rhône Alpes Region through the Project StorAIge
French Nano2022 Program
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9926983/09899413.pdf?arnumber=9899413
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Thermally Stable and High-Speed Ge-Te Based Ovonic Threshold Switching Selector With a Ge Intercalated Structure;IEEE Electron Device Letters;2023-07
2. Improving the GeAsSe Ovonic Threshold Switching Characteristics by Carbon Buffer Layers for Ultralow Leakage Current (∼0.4 nA) and Low Drift Characteristics;ACS Applied Electronic Materials;2023-05-31
3. The improvement of the embedded Ag nanoislands on the performance of Au/Ag/HfOx/HfO2/Ag-NIs/Au devices;Journal of Materials Science: Materials in Electronics;2023-05
4. A refresh operation method for solving thermal stability issues and improving endurance of ovonic threshold switching selectors;Journal of Materials Chemistry C;2023
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